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  2011, Vol. 32 Issue (6): 574-580    
  论文 本期目录 | 过刊浏览 | 高级检索 |
压电复合材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件
宋豪鹏1,高存法2
1. 南京航空航天大学航空宇航学院2. 南京航空航天大学
Shielding effect and emission criterion of a screw dislocation near an interfacial blunt crack in piezoelectric bi-materials
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摘要 研究了压电双材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件。应用保角变换技术,得到了复势函数与应力场的封闭形式解,讨论了位错方位、双材料电弹常数及裂纹钝化程度对位错屏蔽效应和发射条件的影响。结果表明,burgers 矢量为正的螺型位错可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随位错方位角及位错与裂纹尖端距离的增大而减弱,压电双材料中螺型位错对裂纹的屏蔽效应强于相应弹性双材料中螺型位错对裂纹的屏蔽效应;位错发射所需的临界无穷远加载或电位移随位错方位角及裂纹钝化程度的增加而增大;最可能的位错发射角度为零度即位错最可能沿裂纹前方发射。本文解答的特殊情况与已有文献一致。
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关键词 螺型位错压电复合材料界面钝裂纹屏蔽效应位错发射    
Abstract:The shielding effect and emission criterion of a screw dislocation near an interfacial blunt crack in piezoelectric bi-materials is dealt with. Utilizing the conformal mapping technique, the closed form solutions are derived for electric displacement fields and stress fields due to a screw dislocation located near the interfacial blunt crack. The stress intensity factor and critical conditions for dislocation emission are also calculated. The influences of the position of the dislocation and morphology of the blunt crack as well as the electric-elastic properties on the shielding effect and emission criterion are discussed in detail. The results show that positive screw dislocations can reduce the stress intensity factor of the interfacial blunt crack tip (shielding effect). The shielding effect decreases with the increase of dislocation azimuth angle and the distance between the dislocation and the crack tip. The critical loads at infinity and critical remote electric displacement for dislocation emission increases with the increment of the emission angle and the curvature radius of the blunt crack tip, and the most probable angle for screw dislocation emission is zero. The present solutions contain previous results as the special cases.
Key wordsscrew dislocation    piezoelectric composites    interfacial blunt crack    shielding effect    emission criterion
收稿日期: 2010-11-17     
:  O343.7  
通讯作者: 宋豪鹏   
引用本文:   
宋豪鹏;高存法. 压电复合材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件[J]. , 2011, 32(6): 574-580.
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