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Abstract InSb thin films are widely used in high-precision photoelectric storage and infrared detection, fine mechanical property is the key to guarantee their stability under working conditions. In order to improve the shear strength of InSb material, in this paper, the shear response and atomic-scale evolution of InSb films were analyzed from four aspects of different thicknesses, temperatures, slip system orientations and hole densities to further study the influencing factors of shear strength and toughness. In this paper, the molecular dynamics code of the large scale atomic and molecular parallelist (LAMMPS) is applied for atomic-scale simulations. Firstly, InSb model is established and appropriate potential function is selected. Secondly, the boundary conditions and environmental conditions in the relaxation and shear processes are determined, respectively. Finally, the relation of shear stress-strain, the atomic strain and the dislocation analysis were studied, and the shear performance of InSb films under various conditions were discussed. As for InSb films in different aspects, we conclude that thicker films have greater elastic modulus and ultimate strength. The increase of temperature will lead to the decrease of the ultimate strength and shear toughness of the material. It is also observed that the pore shape has an obvious effect on the shear property of the material at 10% pore density, while such effect is greatly weakened at 20% pore density. In addition, it is found that the influence of orientation on shear strength and toughness of materials is not synchronous, for instance, the material has better shear strength under the slip system (130)[-310], while has better shear toughness under the slip system (110)[1-10]. The above conclusions have guiding significance for improving the shear properties of InSb thin films and synthesizing InSb electro-optical and magnetic-sensitive materials with excellent mechanical properties.
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Received: 10 August 2022
Published: 18 April 2023
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2023, Vol. 44 
